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UT6164CJC-10 - Access time: 10 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 12 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 15 ns, 8 K x 8 Bit high speed CMOS SRAM

UT6164CJC-10_8342846.PDF Datasheet


 Full text search : Access time: 10 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 12 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 15 ns, 8 K x 8 Bit high speed CMOS SRAM


 Related Part Number
PART Description Maker
K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
UM612 UM614 UM617 UM604 UM628 UM605 UM611 UM622 UM 15 Watt DC-DC Converters
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:64-BGA; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory
List of Unclassifed Man...
List of Unclassifed Manufacturers
N.A.
Unisonic Technologies
ETC[ETC]
Electronic Theatre Controls, Inc.
HM-6514/883 HM-6514B/883 RAM, 1024x4 CMOS, Access Time 300ns, Mil Std.
RAM, 1024x4 CMOS, Access Time 200ns, Mil Std.
Intersil
K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
UT62L5128BS-70LI UT62L5128BS-55LLI UT62L5128BS-55L Access time: 70 ns, 512 K x 8 Bit low power CMOS SRAM
Access time: 55 ns, 512 K x 8 Bit low power CMOS SRAM
Access time: 100 ns, 512 K x 8 Bit low power CMOS SRAM
UTRON Technology
AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85
Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85
Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85
5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
M41T60 M41T60Q6F SERIAL ACCESS REAL-TIME CLOCK
意法半导
STMICROELECTRONICS[STMicroelectronics]
M41T62 M41T65 M41T64 M41T63 Serial Access Real-Time Clock with Alarms
意法半导
STMICROELECTRONICS[STMicroelectronics]
M41T81S M41T81SM6E M41T81SM6ET M41T81SM6F M41T81SM Serial Access Real-Time Clock with Alarms
STMICROELECTRONICS[STMicroelectronics]
M41T81M6F Serial access Real-Time Clock with alarm 串行访问实时时钟与报
STMicroelectronics N.V.
AS7C3256-12TC AS7C256-12TI AS7C3256-12TI 3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access time
5V 32K x 8 CM0S SRAM (common I/O), 12ns access time
Alliance Semiconductor
M41T50 M41T50Q6F Serial Access Digital Input Real-Time Clock with Alarms
STMICROELECTRONICS[STMicroelectronics]
 
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UT6164CJC-10 standard UT6164CJC-10 switching UT6164CJC-10 state UT6164CJC-10 astable multivibrators UT6164CJC-10 maker
 

 

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